2N6304 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 5.0 Vdc, IE = 0 Vdc)
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
fT
NF
CCB
Test Conditions
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Noise Figure (50 Ohms)
(IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz)
Collector-Base Capacitance
(VCB = 10Vdc, IE = 0, f = 1 MHz)
2N6304
Min.
15
30
3.5
-
Value
Typ.
-
-
-
-
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nAdc
25
-
250
-
Min.
1.4
-
Value
Typ.
-
5.0
0.8
Max.
-
1.0
Unit
GHz
dB
pF
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