2N6304 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N6304
Features
• Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
• Noise Figure = 5.0 dB (typ) @ f = 450 MHz
• High F_T - 1.4 GHz (min) @ IC = 10 mAdc
• Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
I_C
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25º C
Derate above 25º C
Value
15
30
3.5
50
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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