DRF1200 Datasheet, PDF (2/8 Pages) Advanced Power Technology – MOSFET Driver Hybrid

MOSFET Absolute Maxumum Ratings
Symbol Parameter
V_DSS
I_D
R_DS(on)
Drain-Source Voltage
Continuos Drain Current T_HS = 25°C
Drain-Source On State Resistance
Dynamic Characteristics
Symbol Parameter
C_iss
Input Capacitance
C_oss
Output Resistance
C_rss
Reverse Transfer Capacitance
Thermal Characteristics
Symbol
R_θJC
T_J
P_D
P_DC
Characteristic
Junction to Case Thermal Resistance
Operating and Storage Junction Temperature
Maximum Power Dissipation
Total Power Dissipation @ T_C = 25°C
DRF1200
Min Typ Max Unit
1000
V
13
A
0.90
Ω
Min Typ Max Unit
2000
165
pF
75
Ratings
0.13
175
>100
1050
Unit
°C/W
°C
W
Test curcuit show on page 3.
All measurements were made with the Anti-Ring circuit activated unless noted.
1. Symmetry is the percent difference in high and low FWHM times with a 50% duty cycle square wave input.
2 R_L = 50Ω, C_L = 3000pF
3 10% - 90% See Test Circuit
4 50% - 50%, see Test Circuit
5 V_DD = 18V, C_L = 3000pF, F = 10MHz
6 Performance specified with this input.
APT reserves the right to change, without notice, the specifications and information contained herein.
Figure 1, DRF1200 Simplified Ciruit Diagram
A Simplified DRF1200 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitors (C1-C8), their
contribution to the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the
hybrid, allows optimal the gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input, Kelvin signal
ground and the Anti-Ring Function, Provide improved stability and control in Kilowatt to Multi-Kilowatt, High Frequency applications.
The IN pin is the input for the control signal and is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers
and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel
power drivers provide the high current to the gate of the MOSFET and the MOSFET drain is attached to the OUT pin (9).
Driver Control Logic
In (4) HIGH Driver Driver Output LOW
MOSFET OFF Drain (9) HIGH
In (4) LOW Driver
Driver Output HIGH
MOSFET ON Drain (9) LOW
The FUNCTION, FN, pin (3) is used to disable the Anti-Ring function. It is recommended that the device be operated with this function
enabled. Func. = Hi (+5V or Float) Anti-Ring on, Func. = Low (0V or GND.) Anti-ring off.
On the Output side are the POWER GROUND connections pin 8 and pin 10. The DRAIN connection is pin 9. It is suggested that
output currents be restricted to these pins by design.