HMC7229LS6 Datasheet, PDF (6/16 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz

Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC7229LS6
TOP VIEW
(Not to Scale)
HMC7229LS6
V_DD1 1
V_DD3 2
V_GG1 3
11 V_DD2
10 V_DD4
9 V_GG2
NOTES
1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA
SHOWN HEREIN WAS MEASURED WITH THESE PINS
EXTERNALLY CONNECTED TO RF/DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/DC GROUND.
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 10, 11 VDD1 to VDD4 Drain Bias Voltages. External bypass capacitors of 100 pF, 10 nF, and 4.7 µF are required for each of these pins.
See Figure 3.
3, 9
VGG1, VGG2 Gate Controls for the Power Amplifier. Adjust VGGx to achieve the recommended bias current. External bypass
capacitors of 100 pF, 10 nF, and 4.7 µF are required for each of these pins. Apply VGGx bias to either Pin 3 or Pin 9.
See Figure 4.
4, 8
NIC
No Internal Connection. Note that data shown herein was measured with these pins externally connected to
RF/dc ground.
5, 7, 13, 15 GND
Ground Pins. Connect these pins and the exposed ground pad to RF/dc ground. See Figure 5.
6
RFIN
RF Input. This pin is ac-coupled and matched to 50 Ω. See Figure 6.
12
VDET
Detector Voltage. This pin is the dc voltage that represents the RF output power rectified by the diode that is
biased through an external resistor. See Figure 8.
14
RFOUT
RF Output. This pin is ac-coupled and matched to 50 Ω. See Figure 9.
16
VREF
Detector Reference Voltage. This pin is the dc voltage of the diode biased through an external resistor used for
the temperature compensation of VDET. See Figure 7.
EPAD
Exposed Pad. The exposed pad must be connected to RF/dc ground.
Rev. B | Page 5 of 15