HMC7229LS6 Datasheet, PDF (1/16 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz

Data Sheet
GaAs, pHEMT, MMIC, 1 W, Power Amplifier
with Power Detector, 37 GHz to 40 GHz
HMC7229LS6
FEATURES
32 dBm typical saturated output power (PSAT) at 18% power
added efficiency (PAE) at 39 GHz
P1dB compression output power: 31.5 dBm typical
High output third-order intercept (IP3): 40 dBm typical
High gain: 24 dB typical
50 Ω matched input/output
Ceramic, 6 mm × 6 mm, high frequency, air cavity package
APPLICATIONS
Point to point radios
Point to multipoint radios
Very small aperture terminal (VSAT) and satellite
communications (SATCOM)
FUNCTIONAL BLOCK DIAGRAM
HMC7229LS6
V_DD1 1
V_DD3 2
V_GG1 ₃
11 V_DD2
10 V_DD4
9 ^VGG²
GENERAL DESCRIPTION
The HMC7229LS6 is a four stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier, with an integrated temperature compensated on-chip
power detector that operates between 37 GHz to 40 GHz. The
HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated
output power at 18% PAE at 39 GHz from a 6 V supply. With an
excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear
PACKAGE
BASE
GND
NOTES
1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA
SHOWN HEREIN WAS MEASURED WITH THESE PINS
EXTERNALLY CONNECTED TO RF/DC GROUND.
Figure 1.
applications such as high capacity, point to point or multipoint
radios or VSAT/SATCOM applications demanding 32 dBm of
efficient saturated output power. The radio frequency (RF)
input/outputs are internally matched and dc blocked for ease of
integration into higher level assemblies. The HMC7229LS6 is
housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity
package that exhibits low thermal resistance and is compatible
with surface-mount manufacturing techniques.
Rev. B
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