HMC7229LS6 Datasheet, PDF (12/16 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz

Data Sheet
HMC7229LS6
THEORY OF OPERATION
The HMC7229LS6 is gallium arsenide (GaAs), pseudomorphic
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), 1 W power amplifier consisting of
four gain stages that are in series. Figure 33 shows the simplified
block diagram.
The input signal is divided evenly into two, each of these paths
are amplified through four independent gain stages, and the
amplified signals are then combined at the output.
The HMC7229LS6 has single-ended input and output ports
whose impedances are nominally matched to 50 Ω internally
over the 37 GHz to 40 GHz frequency range. Consequently, the
HMC7229LS6 can directly insert into a 50 Ω system with no
impedance matching circuitry required. In addition, multiple
HMC7229LS6 devices can be cascaded back to back without
requiring external matching circuitry. Similarly, multiple
HMC7229LS6 devices can be used with power dividers at the
input and power combiners at the output to obtain higher
output power levels.
Because the input and output impedances are sufficiently stable
vs. the variations in temperature and supply voltage, no impedance
matching compensation is required.
To achieve the best performance and not damage the
HMC7229LS6, do not exceed the absolute maximum ratings.
V_GG1 V_DD3 V_GG1 V_DD3 V_GG1 V_DD3 V_GG1 V_DD1
RFIN
RFOUT
V_GG2 V_DD4 V_GG2 V_DD4 V_GG2 V_DD4 V_GG2 V_DD2
Figure 33. GaAs, pHEMT, 1 W MMIC Power Amplifier Block Diagram
Rev. B | Page 11 of 15