OP176 Datasheet, PDF (3/21 Pages) Analog Devices – Bipolar/JFET, Audio Operational Amplifier

OP176
WAFER TEST LIMITS ^{(@ V}S ^{= ±15.0 V, T}A ^{= +25°C unless otherwise noted)}
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range¹
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Range
Supply Current
V_OS
I_B
I_OS
V_CM
CMRR
PSRR
A_VO
V_O
I_SY
V_CM = 0 V
V_CM = 0 V
V_CM = ± 10.5 V
V = ± 4.5 V to ± 18 V
R_L = 2 kΩ
R_L = 2 kΩ
V_S = ± 18.0 V, R_L = 600 Ω
V_S = ± 22.0 V, V_O = 0 V, R_L = ∞
V_S = ± 4.5 V to ± 18 V,
V_O = 0 V, R_L = ∞
1
350
± 50
± 10.5
80
86
250
13.5
14.8
2.75
2.5
mV max
nA max
nA max
V min
dB min
dB min
V/mV min
V min
V min
mA max
mA max
NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1_{Guaranteed by CMR test.}
ABSOLUTE MAXIMUM RATINGS¹
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 22 V
Input Voltage². . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Differential Input Voltage² . . . . . . . . . . . . . . . . . . . . . . . ± 7.5 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP176G . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
Package Type
θ_JA3
θ_JC
Units
8-Pin Plastic DIP (P)
103
43
°C/W
8-Pin SOIC (S)
158
43
°C/W
NOTES
1_{Absolute maximum ratings apply to both DICE and packaged parts, unless}
otherwise noted.
2_{For input voltages greater than ± 7.5 V limit input current to less than 5 mA.}
3_{θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket}
for P-DIP packages; θ_JA is specified for device soldered in circuit board for SOIC
package.
DICE CHARACTERISTICS
V+
OUT
NULL
V–
NULL
–IN _+IN
OP176 Die Size 0.069 × 0.067 Inch, 4,623 Sq. Mils.
Substrate (Die Backside) Is Connected to V–.
Transistor Count, 26.
ORDERING GUIDE
Model
Temperature Range Package Description Package Option
OP176GP
OP176GS
OP176GSR
OP176GBC
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
+25°C
8-Pin Plastic DIP
8-Pin SOIC
SO-8 Reel, 2500 Pieces
DICE
N-8
SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP176 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–3–