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OP467 Datasheet, PDF (2/16 Pages) Analog Devices – Quad Precision, High Speed Operational Amplifier | |||
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OP467âSPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = Ø15.0 V, TA = +25ØC unless otherwise noted)
Parameter
Symbol Conditions
Min Typ Max
INPUT CHARACTERISTICS
Offset Voltage
VOS
Input Bias Current
IB
Input Offset Current
IOS
Common-Mode Rejection
Large Signal Voltage Gain
CMR
CMR
AVO
Offset Voltage Drift
Bias Current Drift
Long Term Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
âVOS/âT
âIB/âT
âVOS/âT
VO
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
Supply Voltage Range
DYNAMIC PERFORMANCE
Gain Bandwidth Product
Slew Rate
PSRR
ISY
VS
GBP
SR
Full-Power Bandwidth
BWÏ
Settling Time
tS
Phase Margin
θ0
Input Capacitance
Common Mode
Differential
â40°C ⤠TA ⤠+85°C
VCM = 0 V
VCM = 0 V, â40°C ⤠TA ⤠+85°C
VCM = 0 V
VCM = 0 V, â40°C ⤠TA ⤠+85°C
VCM = ± 12 V
VCM = ± 12 V, â40°C ⤠TA ⤠+85°C
RL = 2 kâ¦
RL = 2 kâ¦, â40°C ⤠TA ⤠+85°C
Note 1
RL = 2 kâ¦
RL = 2 kâ¦, â40°C ⤠TA ⤠+85°C
± 4.5 V ⤠VS = ± 18 V
â40°C ⤠TA ⤠+85°C
VO = 0 V
VO = 0 V, â40°C ⤠TA ⤠+85°C
AV = +1, CL = 30 pF
VIN = 10 V Step, RL = 2 kâ¦, CL = 30 pF
AV = +1
AV = â1
VIN = 10 V Step
To 0.01%, VIN = 10 V Step
0.2
0.5
1
150 600
150 700
10
100
10
150
80
90
80
88
83
86
77.5
3.5
0.2
750
± 13.0 ± 13.5
± 12.9 ± 13.12
96
120
86
115
8
10
13
± 4.5
± 18
28
125 170
350
2.7
200
45
2.0
1.0
NOISE PERFORMANCE
Voltage Noise
eN p-p
f = 0.1 Hz to 10 Hz
0.15
Voltage Noise Density
eN
f = 1 kHz
6
Current Noise Density
iN
f = 1 kHz
8
NOTE
1Long Term Offset Voltage Drift is guaranteed by 1000 hrs. Life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
Units
mV
mV
nA
nA
nA
nA
dB
dB
dB
dB
µV/°C
pA/°C
µV
V
V
dB
dB
mA
mA
V
MHz
V/µs
V/µs
MHz
ns
Degrees
pF
pF
µV p-p
nV/âHz
pA/âHz
â2â
REV. C
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