HMC5805A Datasheet, PDF (1/10 Pages) Analog Devices – High P1dB Output Power: 24.5 dBm

HMC5805ALS6
v01.1216
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER
DC - 40 GHz
Typical Applications
The HMC5805ALS6 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
Features
High P1dB Output Power: 24.5 dBm
High Psat Output Power: 27 dBm
Gain: 11.5 dB
Output IP3: 29 dBm
Supply Voltage: +10 V @ 175 mA
16 Lead Ceramic 6x6 mm SMT Package: 36 mm²
General Description
The HMC5805ALS6 is a GaAs pHEMT MMIC Dis-
tributed Power Amplifier which operates between DC
and 40 GHz. The amplifier provides 11.5 dB of gain,
29 dBm output IP3 and +24 dBm of output power at
1 dB gain compression while requiring 175 mA from
a +10 V supply. The HMC5805ALS6 is ideal for EW,
ECM, Radar and test equipment applications. The
HMC5805ALS6 amplifier I/Os are internally matched
to 50 Ohms and the 6x6 mm SMT package is well
suited for automated assembly techniques.
Electrical Specifications, T_A = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 175 mA*
Parameter
Min. Typ. Max. Min.
Frequency Range
DC - 5
Gain
9
12.5
9
Gain Flatness
±1.0
Gain Variation Over Temperature
0.01
Input Return Loss
17
Output Return Loss
18
Output Power for 1 dB Compression (P1dB)
19
25
18
Saturated Output Power (Psat)
27
Output Third Order Intercept (IP3)
34
Noise Figure
4.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
175
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical.
Typ.
5 - 30
11.5
±0.75
0.02
11
13
24.5
27
29
4
175
Max.
Min.
Typ. Max.
30 - 40
11.5
±0.75
0.025
11
9
23
26
26
7
175
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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