ACE2301_12 Datasheet, PDF (3/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE2301
P-Channel Enhancement Mode MOSFET
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_gd
T_d(on)
T_f
t_d(off)
t_f
V_DD=-6V,RL=6Ω
I_D=-1A, V_GEN=-4.5V
R_G=6Ω
C_iss
VDS=-6V, VGS=0V
C_oss
F=1.0MHz
C_rss
Source-Drain Diode
1.7
13 25
36 60
ns
42 70
34 60
415
223
pF
87
Max. Diode Forward Current
Diode Forward Voltage
I_S
V_SD
I_S=-1.6A,V_GS=0V
-1.6 A
-1.2 V
Note: Pulse test pulse width<=300us, duty cycle<=2%.
VER 1.3 3