ACE2301_12 Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE2301
P-Channel Enhancement Mode MOSFET
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
 VDS=-20V
 RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ
 RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ
 Advanced trench process technology
 High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-20
V
V_GS
±12 V
Continuous Drain Current
Pulsed Drain Current¹⁾
Maximum Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient Thermal Resistance (PCB mounted)²⁾
I_D
I_DM
P_D
T_J
T_STG
Rθ_JA
-2.2 A
-8
A
1.25
W
0.8
-55 to 150 ^OC
-55 to 150 ^OC
140 ^OC/W
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in² 2oz Cu PCB board.
3.Guaranteed by design; not subject to production testing.
VER 1.3 1