ACE2301_12 Datasheet, PDF (2/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

Packaging Type
SOT-23-3
3
1
2
ACE2301
P-Channel Enhancement Mode MOSFET
SOT-23-3 Description
1
Gate
2
Source
3
Drain
Ordering information
ACE2301 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Trans conductance
Total Gate Charge
Gate-Source Charge
Symbol
Conditions
Static
BV_DSS
R_DS(ON)
V_GS=0V, I_D=250uA
V_GS=-4.5V, I_D=-2.8A
R_DS(ON) V_GS=-2.5V, I_D=-2.0A
V_GS(th) V_DS=VGS, I_D=250uA
I_DSS
V_DS=-9.6V, V_GS=0V
I_GSS
V_GS=±8V, V_DS=0V
G_fs
V_DS=-5V, I_D=-2.8A
Dynamic³⁾
Q_g
V_DS=-6V, I_D=-2.8A
Q_gs
V_GS=-4.5V
Min. Typ. Max. Unit
-20
V
70.0 100.0
mΩ
85.0 150.0
-0.4
-0.9 V
-1 uA
±100 nA
6.5
S
5.8 10
nC
0.85
VER 1.3 2