5SGA15F2502 Datasheet, PDF (4/9 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

5SGA 15F2502
Max. on-state characteristic model:
V_{T25 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT}
Valid for i_T = 300 – 2000 A
A₂₅
B₂₅
C₂₅
178.9×10^-3 816.7×10^-6 356.4×10^-3
D₂₅
-41.7×10^-3
Max. on-state characteristic model:
V_{T125 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT}
Valid for i_T = 300 – 2000 A
A₁₂₅
11.7×10^-3
B₁₂₅
630.8×10^-6
C₁₂₅
340.2×10^-3
D₁₂₅
-22.0×10^-3
Fig. 2 On-state characteristics
Fig. 3 Surge current and fusing integral vs. pulse
width
Fig. 4 Forward blocking voltage vs. gate-cathode
resistance
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 4 of 9