5SGA15F2502 Datasheet, PDF (1/9 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

V_DRM =
I_TGQM =
I_TSM =
V_T0
=
r_T
=
V_Dclink =
2500 V
1500 A
10×10³ A
1.45 V
0.90 mΩ
1400 V
Asymmetric Gate turn-off
Thyristor
5SGA 15F2502
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Doc. No. 5SYA1214-02 Oct. 06
Blocking
Maximum rated values ¹⁾
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state
voltage
V_DRM
V_GR ≥ 2 V
Repetitive peak reverse
voltage
V_RRM
Permanent DC voltage for V_DC-link Ambient cosmic radiation at sea level
100 FIT failure rate
in open air.
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state I_DRM
current
V_D = V_DRM, V_GR ≥ 2 V
Repetitive peak reverse
I_RRM
V_R = V_RRM, R_GK = ∞ Ω
current
Mechanical data
Maximum rated values ¹⁾
Parameter
Mounting force
Characteristic values
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Symbol Conditions
F_m
Symbol Conditions
D_p
± 0.1 mm
H
m
D_s
Anode to Gate
D_a
Anode to Gate
min
typ
14
15
min
typ
47
25.8
25
15
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
max Unit
2500 V
17
V
1400 V
max Unit
100 mA
50
mA
max Unit
16
kN
max Unit
mm
26.2 mm
0.6
kg
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.