5SGA15F2502 Datasheet, PDF (2/9 Pages) The ABB Group – Asymmetric Gate turn-off Thyristor

5SGA 15F2502
GTO Data
On-state
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Max. average on-state
current
I_T(AV)M Half sine wave, T_C = 85 °C
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
I_T(RMS)
I_TSM
I²t
t_p = 10 ms, T_vj = 125°C, sine wave
After Surge: V_D = V_R = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Parameter
I_TSM
t_p = 1 ms, T_vj = 125°C, sine wave
After Surge: V_D = V_R = 0 V
I²t
Symbol Conditions
On-state voltage
Threshold voltage
Slope resistance
V_T
V_(T0)
r_T
I_T = 1500 A, T_vj = 125°C
T_vj = 125°C
I_T = 300...2000 A
Holding current
I_H
T_vj = 25°C
Turn-on switching
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
di_T/dt_cr
di_T/dt_cr
T_vj = 125°C,
I_T = 1500 A, I_GM = 30 A,
di_G/dt = 20 A/µs
f = 200 Hz
f = 1 Hz
Min. on-time
Characteristic values
Parameter
t_on
V_D = 0.5 V_DRM, T_vj = 125 °C
I_T = 1500 A, di/dt = 100 A/µs,
I_GM = 30 A, di_G/dt = 20 A/µs,
C_S = 3 µF, R_S = 5 Ω
Symbol Conditions
Turn-on delay time
t_d
Rise time
t_r
Turn-on energy per pulse E_on
V_D = 0.5 V_DRM, T_vj = 125 °C
I_T = 1500 A, di/dt = 100 A/µs,
I_GM = 30 A, di_G/dt = 20 A/µs,
C_S = 3 µF, R_S = 5 Ω
Turn-off switching
Maximum rated values ¹⁾
Parameter
Symbol Conditions
Max. controllable turn-off
current
Min. off-time
Characteristic values
Parameter
I_TGQM
t_off
V_DM ≤ V_DRM, di_GQ/dt = 30 A/µs,
C_S = 3 µF, L_S ≤ 0.3 µH
V_D = 0.5 V_DRM, T_vj = 125 °C
V_DM ≤ V_DRM, di_GQ/dt = 30 A/µs,
I_TGQ = I_TGQM,
R_S = 5 Ω, C_S = 3 µF, L_S = 0.3 µH
Symbol Conditions
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
t_S
t_f
E_off
I_GQM
V_D = 0.5 V_DRM, T_vj = 125 °C
V_DM ≤ V_DRM, di_GQ/dt = 30 A/µs,
I_TGQ = I_TGQM,
R_S = 5 Ω, C_S = 3 µF, L_S = 0.3 µH
min
min
min
80
min
min
80
min
typ
max Unit
570
A
900
A
10×10³ A
500×10³ A²s
20×10³ A
200×10³ A²s
typ
max Unit
2.8
V
1.45 V
0.90 mΩ
50
A
typ
max Unit
400 A/µs
600 A/µs
µs
typ
max Unit
2
µs
4
µs
0.5
J
typ
max Unit
1500 A
µs
typ
max Unit
15
µs
2
µs
2
J
480
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 2 of 9