CM50TF-12H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

Thermal
T_j
T_stg
R_thJC
Operating junction temperature range
Storage temperature range
Thermal resistance
junction to case
R_thCH
Thermal resistance case to
heat sink
5STB 24N2800
-40…125 °C
-40…150 °C
22.8 K/kW Anode side cooled
22.8 K/kW Cathode side cooled
11.4 K/kW Double side cooled
4 K/kW Single side cooled
2 K/kW Double side cooled
Analytical function for transient thermal
impedance:
n
å ^{ZthJC(t) = Ri(1- e-t/τ i )}
i =1
i
1
2
3
4
R_i(K/kW)
τ_i(s)
6.77
0.8651
2.51
0.1558
1.34
0.0212
0.78
0.0075
Z_thJC [K/kW]
15
180° sine:
add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1 K/kW
60° rectangular: add 2 K/kW
10
5
0
0.001
0.010
0.100
F_m = 81..108 kN
Double-side cooling
1.000
10.000
t [s]
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1041-03 Sep. 01
page 3 of 5