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| CM50TF-12H Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE | |||
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VSM = 2800 V Bi-Directional Control Thyristor
ITAVM = 2430 A
ITRMS = 3820 A
ITSM = 43000 A
5STB 24N2800
VT0 = 0.85 V
rT
= 0.160 mâ¦
Doc. No. 5SYA1041-03 Sep. 01
⢠Two thyristors integrated into one wafer
⢠Patented free-floating silicon technology
⢠Designed for traction, energy and industrial applications
⢠Optimum power handling capability
⢠Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 24N2800 5STB 24N2600 5STB 24N2200 Conditions
VSM
3000 V
VRM
2800 V
ISM
IRM
dV/dtcrit
VRM is equal to VSM up to Tj = 110°C
2800 V
2600 V
⤠400 mA
⤠400 mA
1000 V/µs
2400 V
f = 5 Hz, tp = 10ms
2200 V
f = 50 Hz,tp = 10ms
VSM
VRM
Tj = 125°C
@ Exp. to 0.67xVSM
Mechanical data
FM Mounting force
nom.
min.
a Acceleration
Device unclamped
Device clamped
max.
m Weight
DS Surface creepage distance
Da Air strike distance
90 kN
81 kN
108 kN
50 m/s2
100 m/s2
2.9 kg
53 mm
22 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
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