CM50TF-12H Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

On-state
I_TAVM
I_TRMS
Max. average on-state
Max. RtMS on-state current
I_TSM
Max. peak non-repetitive
surge current
I²t
Limiting load integral
V_T
On-state voltage
V_T0
Threshold voltage
r_T
Slope resistance
I_H
Holding current
I_L
Latching current
5STB 24N2800
2430 A
3820 A
Half sine wave, T_C = 70°C
43000 A
46000 A
tp =
tp =
10 ms T_j = 125°C
8.3 ms After surge:
9245 kA²s tp =
8781 kA²s tp =
10 ms V_D = V_R = 0V
8.3 ms
1.35 V
0.85 V
0.160 mΩ
I_T =
3000 A
I_T = 1500 - 4500 A T_j = 125°C
50-250 mA
25-150 mA
100-500 mA
50-300 mA
T_j = 25°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
Switching
di/dt_crit Critical rate of rise of on-state
current
t_d
Delay time
t_q
Turn-off time
Q_rr Recovery charge
≤
≤
min
max
250 A/µs
500 A/µs
Cont. f = 50 Hz V_D ≤ 0.67⋅V_DRM , T_j = 125°C
60 sec.
f = 50Hz
I_TRM = 3000 A
I_FG = 2 A, t_r = 0.5 µs
3.0 µs
400 µs
V_D = 0.4⋅V_DRM IFG = 2 A, tr = 0.5 µs
V_D ≤ 0.67⋅V_DRM ITRM = 3000 A, Tj = 125°C
dv_D/dt = 20V/µs V_R > 200 V, di_T/dt = -1.5 A/µs
1100 µAs
2000 µAs
Triggering
V_GT
Gate trigger voltage
≤
I_GT
Gate trigger current
≤
V_GD
Gate non-trigger voltage
≥
I_GD
Gate non-trigger current
≥
V_FGM
Peak forward gate voltage
I_FGM
Peak forward gate current
V_RGM
Peak reverse gate voltage
P_G
Maximum gate power loss
2.6 V
400 mA
0.3 V
10 mA
12 V
10 A
10 V
3W
T_j = 25°C
T_j = 25°C
V_D = 0.4⋅V_RM
V_D = 0.4⋅V_RM
T_j = 125°C
T_j = 125°C
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1041-03 Sep. 01
page 2 of 5