AP6982GM Datasheet, PDF (6/7 Pages) Advanced Power Electronics Corp. – Low On-resistance, Fast Switching Characteristic

AP6982GM
Channel-2
50
T _A =25 ^o C
10V
7.0V
40
5.0V
30
4.5V
20
10
V _G =3.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I_D=5A
T _A =25 ^o C
40
30
20
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T _j =150 ^o C
4
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
50
T _A = 150 ^o C
40
30
20
10V
7.0V
5.0V
4.5V
10
V _G =3.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =7A
1.4
V _G =10V
1.2
1.0
0.8
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature