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| AP6982GM Datasheet, PDF (3/7 Pages) Advanced Power Electronics Corp. – Low On-resistance, Fast Switching Characteristic | |||
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AP6982GM
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
30 -
-
V
- 0.03 - V/â
- 22 26 mΩ
- 36 45 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±25V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
- 10 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
-
9 15 nC
-
3
- nC
-
5
- nC
-
9
- ns
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
-
6
- ns
- 19 - ns
-
6
- ns
- 640 1030 pF
- 150 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg
Gate Resistance
f=1.0MHz
- 105 - pF
- 1.7 2.5 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 18 - ns
-
8
- nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135â/W when mounted on min. copper pad.
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