AP6982GM Datasheet, PDF (1/7 Pages) Advanced Power Electronics Corp. – Low On-resistance, Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP6982GM
Pb Free Plating Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
▼ Fast Switching Characteristic
▼ Surface Mount Package
D2
D2
D2
D1 ^D2
D1 ^D1
D1
Description
SO-8
SO-8
G2
G2
S2
G1 ^S2
S1S1 ^G1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
CH-1
CH-2
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
D1
G1
G2
S1
30V
18mΩ
8.5A
30V
26mΩ
7.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
CH-1
CH2
30
30
±25
±25
8.5
7.3
6.8
5.8
30
30
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
201220042