AP5521GH-HF_16 Datasheet, PDF (6/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance

AP5521GH-HF
P-Channel
20
T _A = 25 ^o C
16
12
-10V
-8.0V
-7.0V
-6.0V
V _G = -5.0V
8
4
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
160
I _D = -1 A
T _A =25 ^o C
150
140
130
120
110
2
4
6
8
10
-V _GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T _j =150 ^o C
T _j =25 ^o C
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
12
T _A = 150 ^o C
10
8
-10V
-8.0V
-7.0V
-6.0V
V _G = -5.0V
6
4
2
0
0
1
2
3
4
5
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I _D = -2A
V _G = -10V
2.0
1.6
1.2
0.8
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6