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| AP5521GH-HF_16 Datasheet, PDF (2/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance | |||
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AP5521GH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=250uA
VGS=10V, ID=2A
VGS=5V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
VDS=10V, ID=2A
VDS=80V, VGS=0V
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=+20V, VDS=0V
ID=2A
VDS=80V
VGS=10V
VDS=50V
ID=2A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
100 -
-
V
-
- 150 mâ¦
-
- 250 mΩ
1
-
3
V
- 2.8 -
S
-
- 10 uA
-
- +100 nA
- 10 16 nC
-
2
- nC
-
4
- nC
- 6.5 - ns
-
7
- ns
- 14 - ns
- 3.5 - ns
- 420 672 pF
- 60 - pF
- 40 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2.4A, VGS=0V
IS=2A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 40 - ns
- 75 - nC
2
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