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AP5521GH-HF_16 Datasheet, PDF (3/8 Pages) Advanced Power Electronics Corp. – Fast Switching Performance
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AP5521GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-100 -
-
V
RDS(ON)
Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A
VGS=-5V, ID=-1A
-
- 155 mΩ
-
- 250 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
Qg
Total Gate Charge
ID=-2A
Qgs
Gate-Source Charge
VDS=-80V
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
td(on)
Turn-on Delay Time
VDS=-50V
tr
Rise Time
ID=-2A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf
Fall Time
VGS=-10V
Ciss
Input Capacitance
VGS=0V
Coss
Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 8.5 -
S
-
- -10 uA
-
- +100 nA
- 29 46 nC
-
3
- nC
-
9
- nC
-
9
- ns
-
6
- ns
- 49 - ns
- 22 - ns
- 1400 2240 pF
- 110 - pF
- 70 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-2.4A, VGS=0V
IS=-2A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
-
- -1.3 V
- 39 - ns
- 73 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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