AP630GP Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP630GP
16
I _D =9A
14
12
10
V _DS =80V
V _DS =120V
V _DS =160V
8
6
4
2
0
0
5
10
15
20
25
30
35
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1
11
21
31
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T _j =150 ^o C
1.00
T _j =25 ^o C
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
4
3.5
3
2.5
2
-50
0
50
100
150
T _j Junction Temperayure ( ^o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature