AP630GP Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP630GP
10
8
6
4
2
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
80
60
40
20
0
0
50
100
150
Tc , Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
100
10us
10
100us
1
T _c =25 ^o C
Single Pulse
0
1
10
100
V _DS (V)
1ms
10ms
100ms
1000
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance