|
AP630GP Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
|
Advanced Power
Electronics Corp.
AP630GP
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Dynamic dv/dt Rating
â¼ Repetitive Avalanche Rated
â¼ Fast Switching
â¼ Simple Drive Requirement
Description
G
D
S
TO-220
BVDSS
RDS(ON)
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630GP) is available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
± 30
9
5.7
36
74
0.59
240
9
7
-55 to 150
-55 to 150
200V
400mΩ
9A
D
S
Units
V
V
A
A
A
W
W/â
mJ
A
mJ
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.7
62
Unit
â/W
â/W
Data & specifications subject to change without notice
200219032
|
▷ |