AP4800GEM Datasheet, PDF (5/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP4800GEM
2
I _D =1mA
1.6
1.2
0.8
0.4
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 13. Normalized BV_DSS v.s. Junction
Temperature
80
T _j =25 ^o C
60
V _GS =3.0V
40
.
V _GS =4.0V
20
4.5V
5.0V
V _GS =10V
0
0
4
8
12
16
20
24
I _D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
3.2
2.4
1.6
0.8
0
0
50
100
150
T _A , Ambient Temperature( ^o C)
Fig 14. Total Power Dissipation
5