AP4800GEM Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP4800GEM
8
I_D=5A
V _DS =15V
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1000
800
C _iss
600
400
200
C _oss
0
C _rss
1
5
9
13
17
21
25
29
33
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
10
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
T _A =25 ^o C
Single Pulse
0.01
0.01
0.1
1
10
V _DS , Drain-to-Source Voltage (V)
1s
DC
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
.
0.1
0.05
0.02
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃/W
0.01
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
40
V _DS =5V
30
20
T _j =150 ^o C
10
T _j =25 ^o C
T _j = -55 ^o C
0
0
1
2
3
4
5
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
T _A , Ambient Temperature ( ^o C )
Fig 12. Drain Current v.s. Ambient
Temperature
4