AP4800GEM Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP4800GEM
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
SG
S
S
Description
AP4800 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
BV_DSS
R_DS(ON)
I_D
G
30V
18mΩ
9.2A
D
S
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
V_DS
. ^Parameter
Drain-Source Voltage
Rating
30
Units
V
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
+20
V
9.2
A
7.3
A
50
A
P_D@T_A=25℃
Total Power Dissipation
2.5
W
T_STG
Storage Temperature Range
-55 to 150
℃
T_J
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201408181