AP9962GMA Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9962GMA
12
I _D =20A
9
V _DS = 20 V
V _DS = 25 V
V _DS = 30 V
6
3
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
1000
100
100us
10
1ms
1
T _C =25 ^o C
Single Pulse
10ms
100ms
DC
0.1
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
80
V _DS =5V
60
T_j =25 ^o C T _j =150 ^o C
40
20
0
0
2
4
6
8
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
C _iss
1000
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
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