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AP9962GMA Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP9962GMA
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ SO-8 similar area footprint and pin assignment
â¼ Low Gate Charge
D
â¼ Fast Switching Speed
â¼ RoHS Compliant
G
S
Description
The APAK-5 package is preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
20mΩ
36A
D
S SS G
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
Rating
40
±20
36
23
120
37
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Max.
Value
3.4
85
Units
â/W
â/W
Data and specifications subject to change without notice
200523061-1/4
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