AP9962GMA Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

100
T _C =25 ^o C
80
60
40
10V
7.0V
5.0V
4.5V
20
V _G =3.0V
0
0.0
2.0
4.0
6.0
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I _D = 16 A
T _C =25 ℃
50
30
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
T _j =150 ^o C T _j =25 ^o C
15
10
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
90
T _C =150 ^o C
60
AP9962GMA
10V
7.0V
5.0V
4.5V
30
V _G =3.0V
0
0.0
2.0
4.0
6.0
8.0
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D =20A
V _G =10V
1.2
0.8
0.4
25
50
75
100
125
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
40.0
30.0
V _GS =4.5V
20.0
V _GS =10V
10.0
0.0
0
10
20
30
40
50
60
70
I _D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
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