AP9435GG Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9435GG
12
9
I _D =- 4 A
V _DS =-2 5 V
6
3
0
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
1ms
0.1
T _A =25 ^o C
Single Pulse
10ms
100ms
1s
10s
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
20
V _DS =-5V
15
10
T _j =25 ^o C
T _j =150 ^o C
5
0
0
2
4
6
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
1000
C _iss
C _oss
C _rss
100
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.01
0.00001
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Ta
Rthja=100^oC/W
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4/4