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| AP9435GG Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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AP9435GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=-4.5V, ID=-2A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=± 20V
ID=-4A
VDS=-25V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
f=1.0MHz
Gate Resistance
f=1.0MHz
-30 -
-
V
- -0.1 - V/â
-
- 50 mΩ
-
- 90 mΩ
-1 - -3 V
-
6
-
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 10 16 nC
-
2
- nC
-
6
- nC
- 10 - ns
-
7
- ns
- 26 - ns
- 14 - ns
- 520 830 pF
- 180 - pF
- 130 - pF
- 16 24 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-1A, VGS=0V
IS=-4A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
-
- -1.3 V
- 30 - ns
- 24 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
2/4
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