AP9435GG Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

20
T _A =25 ^o C
-10V
-7.0V
-5.0V
15
-4.5V
10
5
V _G =-3.0V
0
0
2
4
6
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
160
I _D =-2A
T _A =25 ℃
120
80
40
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T _j =150 ^o C
T _j =25 ^o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
AP9435GG
20
T _A =150 ^o C
-10V
-7.0V
-5.0V
15
-4.5V
10
V _G =-3.0V
5
0
0
2
4
6
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I _D = -4 A
V _G =-10V
1.4
1.0
0.6
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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