AP75T10GS Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP75T10GS/P
12
I _D = 30 A
10
V _DS = 50 V
8
V _DS = 64 V
V _DS = 80 V
6
4
2
0
0
20
40
60
80
100
120
140
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
C _iss
1000
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
100us
1ms
10
10ms
T _c =25 ^o C
Single Pulse
1
0.1
1
10
100ms
DC
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_DS
90%
10%
V_GS
t_d(on) ^tr
t_d(off) t_f
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4