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AP75T10GS Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP75T10GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
IGSS
Gate-Source Leakage
Qg
Total Gate Charge2
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Source-Drain Diode
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=100V, VGS=0V
VDS=80V ,VGS=0V
VGS= ±20V
ID=30A
VDS=80V
VGS=4.5V
VDS=50V
ID=30A
RG=10Ω,VGS=10V
RD=1.6Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
100 -
-
V
- 0.09 - V/℃
-
- 15 mΩ
-
- 21 mΩ
1
-
3
V
- 52 -
S
-
- 10 uA
-
- 100 uA
-
- ±100 nA
- 69 110.4 nC
- 12 - nC
- 39 - nC
- 12 - ns
- 75 - ns
- 220 - ns
- 250 - ns
- 5690 9100 pF
- 540 - pF
- 310 - pF
- 1.1 -
Ω
Min. Typ. Max. Units
-
- 1.3 V
- 51 - ns
- 74 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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