AP75T10GS Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

250
T _C = 25 ^o C
200
150
100
10V
6.0 V
5.0V
4.5V
V _G =3.0V
50
0
0
2
4
6
8
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
17
I _D =16A
16
T _C =25 ^o C
15
14
13
12
11
2
4
6
8
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
45
30
T _j =150 ^o C
15
T _j =25 ^o C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP75T10GS/P
120
T _C = 150 ^o C
100
80
60
10V
6.0V
5.0V
4.5V
V _G =3.0V
40
20
0
0
1
2
3
4
5
6
7
8
9
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
1.8
I _D =30A
V _G =10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.5
1
0.5
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3