AP6925GY Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Surface Mount Package

AP6925GY
10
8
V _DS = -12V
I _D = -1.6A
6
4
2
0
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1ms
1
10ms
0.1
T _A =25 ^o C
Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SCHOTTKY DIODE
10
1
20V
16V
0.1
0.01
0.001
25
50
75
100
125
T _j , Junction Temperature ( ^o C)
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
f=1.0MHz
1000
C _iss
100
C _oss
C _rss
10
1
5
9
13
17
21
25
29
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
0.1
0.01
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 240℃/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10
100
Fig 10. Effective Transient Thermal Impedance
1
T _j = 1 25 ^o C
T _j = 25 ^o C
0.1
0
0.2
0.4
0.6
0.8
V _F , Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop
4