AP6925GY Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Surface Mount Package

6
T _A = 25 ^o C
4
-50V
- 4 .0V
- 3 .0V
- 2.5 V
V _G = - 2.0 V
2
0
0
0.5
1
1.5
2
-V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
200
I _D = - 1. 2 A
T _A =25 ^o C
175
150
125
100
0
2
4
6
8
10
-V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
2.0
1.6
T _j =125 ^o C
T _j =25 ^o C
1.2
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6925GY
6
T _A =125 ^o C
- 5.0 V
- 4 .0V
5
- 3 .0V
- 2 .5V
V _G = - 2.0 V
4
3
2
1
0
0
1
1
2
2
3
3
4
4
-V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.4
I _D =- 1.6 A
V _G = -4.5 V
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
180
160
V _GS =-2.5V
140
V _GS =-4.5V
120
100
0
2
4
-I _D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
6
3