AP6925GY Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Low Gate Charge, Surface Mount Package

Advanced Power
Electronics Corp.
AP6925GY
RoHS-compliant Product
P-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Low Gate Charge
▼ Surface Mount Package
▼ RoHS Compliant
Description
D
NC
K
SOT-26
G
S
A
BV_DSS
R_DS(ON)
I_D
-16V
150mΩ
- 1.6A
D
A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra lower on-resistance and
cost-effectiveness.
G
S
K
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_KA
V_GS
I_D@T_A=25^oC
I_D@T_A=70^oC
I_DM
P_D@T_A=25^oC
Drain-Source Voltage
Reverse Voltage (Schottky)
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Rating
-16
20
+8
-1.6
-1.2
-6
0.55
0.005
-55 to125
-55 to 125
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Maximum Thermal Resistance, Junction-ambient³ (Schottky)
Value
180
180
Units
V
V
V
A
A
A
W
W/℃
o_C
o_C
Unit
o_C/W
o_C/W
Data and specifications subject to change without notice
1
200808072