AP6924GEY Datasheet, PDF (4/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL MOSFET WITH SCHOTTKY DIODE

AP6924GEY
12
I _D =0.6A
V _DS =10V
8
V _DS =12V
V _DS =16V
4
0
0
0.5
1
1.5
2
2.5
3
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
100us
1ms
1
10ms
100ms
0.1
1s
T _A =25 ^o C
DC
Single Pulse
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SCHOTTKY DIODE
10
f=1.0MHz
100
C _iss
C _oss
C _rss
10
1
3
5
7
9
11
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=180^oC/W
0.01
0.1
1
t , Pulse Width (s)
10
100
Fig 10. Effective Transient Thermal Impedance
1
1
20V
0.1
16V
0.01
T _j = 1 25 ^o C
T _j = 25 ^o C
0.001
25
50
75
100
125
T _j , Junction Temperature ( ^o C)
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
0.1
0
0.2
0.4
0.6
0.8
V _F , Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop