AP6924GEY Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL MOSFET WITH SCHOTTKY DIODE

MOSFET
2.5
T _A =25 ^o C
2.0
1.5
1.0
5.0V
4.5V
3.5V
2.5V
0.5
V _G =2.0V
0.0
0
0.5
1
1.5
2
2.5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1250
1050
I _D = 0.5A
T _A =25 ^o C
850
650
450
250
1
2
3
4
5
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.0
0.8
0.6
T _j =125 ^o C
T _j =25 ^o C
0.4
0.2
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6924GEY
2.5
T _A =125 ^o C
2.0
5.0V
4.5V
3.5V
1.5
2.5V
1.0
0.5
V _G =2.0V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I _D =1A
1.6
V _G =4.5V
1.3
1.0
0.7
0.4
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature