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| AP6924GEY Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL MOSFET WITH SCHOTTKY DIODE | |||
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AP6924GEY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=1A
VGS=2.5V, ID=0.5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=5V, ID=600mA
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±6V
ID=600mA
VDS=16V
VGS=4.5V
VDS=10V
ID=600mA
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=16.7Ω
VGS=0V
VDS=10V
f=1.0MHz
20 -
-
V
- 0.02 - V/â
-
- 600 mΩ
-
- 850 mΩ
0.5 - 1.2 V
-
1
-
S
-
-
1 uA
-
- 10 uA
-
- ±10 uA
- 1.3 2 nC
- 0.3 - nC
- 0.5 - nC
- 21 - ns
- 53 - ns
- 100 - ns
- 125 - ns
- 38 60 pF
- 17 - pF
- 12 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=750mA, VGS=0V
Min. Typ. Max. Unit
-
- 1.2 V
Schottky Characteristics@Tj=25â
Symbol
Parameter
VF
Forward Voltage Drop
Irm
Maximum Reverse Leakage Current
CT
Junction Capacitance
Test Conditions
IF=500mA
Vr=20V
Vr=10V
Min. Typ. Max. Units
-
- 0.5 V
-
- 100 uA
- 21 - pF
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180â/W when mounted on min. copper pad.
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