AP6680AGM Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6680AGM
16
I _D = 12 A
12
V _DS =15V
V _DS =20V
V _DS = 25 V
8
4
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
1s
T _A =25 ^o C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V _DS =5V
T _j =25 ^o C T _j =150 ^o C
40
30
20
10
0
0
2
4
6
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
1000
C _iss
C _oss
C _rss
100
1
5
9
13
17
21
25
29
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
0.1
0.01
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P_DM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
V_G
4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4