AP6680AGM Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP6680AGM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
R_DS(ON)
I_D
30V
11mΩ
12A
S
D
D
D
D
SO-8
G
S
S
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Rating
30
+20
12
9.8
60
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200810084