AP6680AGM Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

50
T _A = 25 ^o C
10V
7.0 V
40
5.0 V
4.5 V
30
V _G = 3.0 V
20
10
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I_D=8A
T _A =25 ℃
40
20
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T _j =150 ^o C
T _j =25 ^o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6680AGM
50
T _A = 150 ^o C
10V
7.0 V
40
5.0 V
4.5 V
30
V _G = 3.0 V
20
10
0
0
1
2
3
4
5
6
7
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I _D = 12 A
V _G =10V
1.3
1.0
0.7
25
50
75
100
125
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20.0
V _GS =4.5V
V _GS =10V
10.0
0.0
0
10
20
30
I _D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
40
3