AP65SL130AI Datasheet, PDF (4/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP65SL130AI
12
I _D =14A
10 V _DS =480V
8
6
4
2
0
0
20
40
60
80
100
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
10000
C _iss
1000
0.37Ω
100
I_D3,4
C _oss
C _rss
10
1
0.1
0
200
400
600
800
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
10
10us
100us
1ms
1
.
10ms
100ms
0.1
T _C =25 ^o C
Single Pulse
0.01
1
10
100
V _DS , Drain-to-Source Voltage (V)
DC
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
60
V _DS =10V
50
T _j =25 ^o C
40
30
T _j =150 ^o C
20
10
0
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
V_G
10V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4