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AP65SL130AI Datasheet, PDF (2/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
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AP65SL130AI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=9.6A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=14A
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
Qg
Total Gate Charge
ID=14A
Qgs
Gate-Source Charge
VDS=480V
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
td(on)
Turn-on Delay Time
VDD=300V
tr
Rise Time
ID=14A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf
Fall Time
VGS=10V
Ciss
Input Capacitance
VGS=0V
Coss
Output Capacitance
VDS=100V
Crss
Reverse Transfer Capacitance
. f=1.0MHz
Rg
Gate Resistance
Source-Drain Diode
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=14A, VGS=0V
IS=14A, VGS=0V
dI/dt=30A/µs
Min. Typ. Max. Units
650 -
-
V
-
- 0.13 Ω
2
-
5V
- 25 -
S
-
- 100 uA
-
- +100 nA
- 82 131.2 nC
- 21 - nC
- 33 - nC
- 24 - ns
- 42 - ns
- 74 - ns
- 38 - ns
- 3380 5408 pF
- 90 - pF
- 11 - pF
- 4.5 9 Ω
Min. Typ. Max. Units
- 0.85 -
V
- 430 - ns
- 2.5 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Ensure that the junction temperature does not exceed TJmax..
5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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